![](../../../Pictures/02/2/59CY84F.JPG) 2259 |
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A GaAs infrared emitting diode in a standard T1 (3mm) size plastic package, that has been designed for a variety of low-cost, high volume applications, e.g., IR remote control and other consumer and entertainment products. The device is an excellent match with SFH309 phototransistor, and features high pulse power, good long term stability and a 40° wide beam. Lead spacing: 2· 54mm. |
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IF =100mA, tP = 20ms: |
950▒20nm |
Spectral bandwidth at 50% of |
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IMAX at IF =100mA, tP = 20ms: |
55nm |
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IF =100mA, tP = 20ms: |
>equal;16mW/sr |
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IF =1A, tP = 100╡s: |
150mW/sr |
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IF =100mA, tP = 20ms: |
14mW |
Switch time IF =100mA: |
1╡s |
Surge current (t =10╡s): |
3A |
Breakdown voltage (IR =100╡A): |
30V |
Typical reverse current (VR = 5V): |
0· 01╡A |
Power dissipation at 25°C: |
165mW |
Junction temperature: |
100°C |
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