SFH409 GaAs Infrared Emitting Diode

Product Details

SFH409 GaAs Infrared Emitting Diode
Siemens

2259

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Description:

A GaAs infrared emitting diode in a standard T1 (3mm) size plastic package, that has been designed for a variety of low-cost, high volume applications, e.g., IR remote control and other consumer and entertainment products. The device is an excellent match with SFH309 phototransistor, and features high pulse power, good long term stability and a 40° wide beam. Lead spacing: 2· 54mm.

Specifications:

Peak wavelength emission

IF =100mA, tP = 20ms:

950▒20nm

Spectral bandwidth at 50% of

IMAX at IF =100mA, tP = 20ms:

55nm

Radiant intensity

IF =100mA, tP = 20ms:

>equal;16mW/sr

IF =1A, tP = 100╡s:

150mW/sr

Total radiant flux

IF =100mA, tP = 20ms:

14mW

Half angle:

▒20°

Switch time IF =100mA:

1╡s

Forward current:

100mA

Reverse voltage:

Surge current (t =10╡s):

Forward voltage

IF =100mA:

1· 30V

IF =1A tP =100╡s:

1· 9V

Breakdown voltage (IR =100╡A):

30V

Typical reverse current (VR = 5V):

0· 01╡A

Capacity (VR = 0V):

25pF

Power dissipation at 25°C:

165mW

Junction temperature:

100°C